 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| APTDF430U100G Single diode Power Module Application * * * * * * * Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Electric vehicles VCES = 1000V IC = 430A @ Tc = 80C Features * * * * * * Benefits * * * * * Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Ultra fast recovery times Soft recovery characteristics Very low stray inductance High blocking voltage High current Low leakage current A1 A S P MTM A2 A S P MTM K1 K2 Absolute maximum ratings Symbol VR VRRM IF(A V) IF(RMS) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Tc = 25C Tc = 80C Tj = 25C Max ratings 1000 500 430 850 5000 Unit V RMS Forward Current Non-Repetitive Forward Surge Current A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APTDF430U100G - Rev 1 June, 2006 APTDF430U100G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic VF IRM CT Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Test Conditions IF = 500A IF = 1000A IF = 500A Tj = 150C Tj = 25C VR = 1000V Tj = 150C VR = 200V Min Typ 2.0 2.5 Max 2.3 1.8 2500 5000 580 Unit V A pF Dynamic Characteristics Symbol Characteristic trr1 trr2 trr3 tfr1 tfr2 IRRM1 IRRM2 Qrr1 Qrr2 Vfr1 Vfr2 dIM/dt Forward Recovery Time Reverse Recovery Current Reverse Recovery Charge Forward Recovery Voltage Rate of Fall of Recovery Current Reverse Recovery Time Test Conditions IF=1A,VR=30V di/dt = 15A/s IF = 500A VR = 540V di/dt=1000A/s Tj = 25C Tj = 25C Tj = 100C Tj = 25C Tj = 100C Tj = 25C IF = 500A VR = 540V di/dt=1000A/s Tj = 100C Tj = 25C Tj = 100C Tj = 25C Tj = 100C Tj = 25C Tj = 100C Min Typ 80 100 200 135 200 35 65 1.75 6.5 31 31 1000 500 Max 95 120 300 Unit ns ns 50 85 3 12.8 A C V A/s Thermal and package characteristics Symbol Characteristic RthJC Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case VISOL t =1 min, I isol<1mA, 50/60Hz TJ Operating junction temperature range TSTG Storage Temperature Range TC Operating Case Temperature Torque Wt Mounting torque Package Weight To heatsink For terminals M5 M6 Min 2500 -40 -40 -40 2.5 3 Typ Max 0.08 Unit C/W V www.microsemi.com 2-3 APTDF430U100G - Rev 1 June, 2006 150 125 100 3.5 4 250 C N.m g APTDF430U100G LP4 Package outline (dimensions in mm) A S P MTM Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3-3 APTDF430U100G - Rev 1 June, 2006 A S P MTM |
Price & Availability of APTDF430U100G
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |